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Meso Scale Diagnostics LLC
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Image Search Results
Journal: Materials
Article Title: Epitaxial Growth of Silicon on Silicon Wafers by Direct Laser Melting
doi: 10.3390/ma13214728
Figure Lengend Snippet: Electron backscatter diffraction (EBSD) mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.
Article Snippet: Characterization of the crystalline orientation of the grown material with respect to the wafer was then implemented by an
Techniques: Sample Prep